The groundbreaking ceremony of the high-end integrated circuit discrete device industrialization base of Galaxy Microelectronics

      On the morning of December 29, 2025, the groundbreaking ceremony for the high-end integrated circuit discrete device industrialization base of Changzhou Galaxy Century Microelectronics Co., LTD. (hereinafter referred to as “Galaxy Microelectronics”) was grandly held in Changzhou National High-tech Zone (Xinbei District).Wang Jianfeng, secretary of Changzhou Municipal Party Committee, attended the scene and witnessed this milestone moment in the development history of the company with Chairman Yang Senmao, general manager Liu Jun and other company management, as well as leaders of Xinbei District Zhou Qing, Shi Xuyong, Hang Hongwei and other guests.
      The groundbreaking ceremony site was filled with a solemn and enthusiastic atmosphere. The cornerstone symbolizing hope and foundation is already in place, signifying the solid start of the new round of industrial grand blueprint of Galaxy Microelectronics. The presence of Mr. Wang Jianfeng, the Secretary of the Municipal Committee of the Communist Party of China, reflects the deep concern and strong support of the Municipal Committee and government of Changzhou for the high-quality development of Galaxy Microelectronics and the local semiconductor industry. The visit of the leaders from Xinbei District demonstrates the firm determination of the local area to safeguard major projects and optimize the business environment.
      Chairman Yang Senmao and General Manager Liu Jun of the company led the core management team to participate throughout the process. Under the joint witness of leaders and partners from all sides, accompanied by inspiring music and enthusiastic applause, the guests present held golden shovels together to lay the foundation for the base. At this moment, it is not only about filling the soil for the new project, but also about deeply rooting the towering tree of Changzhou as the “New Energy Capital” and the advanced manufacturing cluster.
At the groundbreaking ceremony, Yang Senmao, the chairman of the company, delivered a speech, providing a detailed introduction and future outlook on the construction goals and strategic significance of the base.
      Chairman Yang Senmao pointed out that the current waves of automotive electronicization, energy greening and industrial intelligence are sweeping the world, and the demand for high-end semiconductor discrete devices and power modules is showing explosive growth. As a leading domestic semiconductor IDM enterprise, Galaxy Microelectronics has always taken serving the country through industry as its mission. The launch of the high-end industrialization base construction this time is a key move for the company to respond to the opportunities of The Times and implement its development strategy.
      After the project is fully completed and put into operation, it is expected to form a huge production capacity matrix with an annual output of 550 million automotive-grade discrete devices, 8 billion small-signal and power devices, 2.5 billion optoelectronic devices, and 50 million IGBTs and silicon carbide power modules. Chairman Yang Senmao introduced that this will not only greatly alleviate the company’s current tight production capacity bottleneck, but also promote the company’s product structure to comprehensively upgrade towards the strategic goal of “higher reliability and higher technological added value”. 

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